PART |
Description |
Maker |
MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
8N50L-TF1-T 8N50G-TF1-T 8N50G-TA3-T 8N50L-TA3-T |
8 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
12N50L-TF1-T 12N50G-TF1-T 12N50G-TA3-T 12N50L-TA3- |
12 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
7N50L-TF1-T 7N50G-TF1-T 7N50G-TA3-T 7N50L-TA3-T |
7 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
NTD23N03R NTD23N03R-1 NTD23N03R-1G NTD23N03RG NTD2 |
Power MOSFET 23A, 25V, N-Channel DPAK 23 Amps / 25 Volts / N-Channel DPAK 23 Amps, 25 Volts, N−Channel DPAK 23 Amps, 25 Volts, N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
NTB45N06 NTB45N06T4 NTP45N06 NTP45N06_D NTP45N06D |
Power MOSFET 45 Amps, 60 Volts N?Channel TO?20 and D2PAK Power MOSFET 45 Amps / 60 Volts Power MOSFET 45 Amps, 60 Volts N-Channel TO-220 and D2PAK Power MOSFET 45 Amps, 60 Volts 功率MOSFET四十五安培,60伏特
|
ONSEMI[ON Semiconductor]
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
SDR955_3 SDR953_3 SDR953-3 SDR954_3 |
50 AMPS 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D |
Power MOSFET -3.05 Amps-30 Volts Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V,双P通道,SO-8封装的功率MOSFET) Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8
|
ON Semiconductor
|
SDR625CAP6 |
40 AMPS 300-500 VOLTS 35 nsec COMMON ANODE & CATHODE HYPERFAST CENTERTAP RECTIFIER
|
Solid States Devices, Inc.
|
MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
NTMD2P01R2 NTMD2P01R2-D |
Power MOSFET -2.3 Amps, -16 Volts Dual SO-8 Package Power MOSFET -2.3 Amps, -16 Volts Dual SO Package(-2.3A16V,双通道SO-8封装的功率MOSFET) 2.3 A, 16 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|